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npn general pupose amplifier this device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 ma. mmbt4401 2n4401 absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 6.0 v i c c o ll e c t o r c u r r e nt - c o n t inu o us 60 0 ma t j , t st g operating and storage junction temperature range -55 to +150 c thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units 2n4401 *mmbt4401 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw / c r jc thermal resistance, junction to case 83.3 c/w r j a thermal resistance, junction to ambient 200 357 c/w c b e to-92 c b e sot-23 mark: 2x * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ? 2001 fairchild semiconductor co rporatio n 2n4401 / mmbt4401 2n4401/mmbt4401, rev a
3 2n4401 / mmbt4401 electrical characteristics ta = 25c unless otherwise noted off characteristics v ( br ) ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 40 v v ( br ) cbo collector-base breakdown voltage i c = 0.1 ma, i e = 0 60 v v ( br ) ebo emitter-base breakdown voltage i e = 0.1 ma, i c = 0 6.0 v i bl base cutoff current v ce = 35 v, v eb = 0.4 v 0.1 a i cex collector cutoff current v ce = 35 v, v eb = 0.4 v 0.1 a on characteristics* h fe dc current gain i c = 0.1 ma, v ce = 1.0 v i c = 1.0 ma, v ce = 1.0 v i c = 10 ma, v ce = 1.0 v i c = 150 ma, v ce = 1.0 v i c = 500 ma, v ce = 2.0 v 20 40 80 100 40 300 v ce( sat ) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.4 0.75 v v v be( sat ) base-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.75 0.95 1.2 v v small signal characteristics f t current gain - bandwidth product i c = 20 ma, v ce = 10 v, f = 100 mhz 250 mhz c cb collector-base capacitance v cb = 5.0 v, i e = 0, f = 140 khz 6.5 p f c eb emitter-base capacitance v be = 0.5 v, i c = 0, f = 140 khz 30 pf h ie input impedance i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 1.0 1 5 k ? h re voltage feedback ratio i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 0.1 8 .0 x 10 -4 h fe small-signal current gain i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 40 500 h oe output admittance i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 1.0 3 0 mhos switching characteristics t d d e l a y t i m e v cc = 30 v , v e b = 2 v , 15 ns t r rise time i c = 150 ma, i b1 = 15 ma 20 ns t s storage time v cc = 30 v, i c = 150 ma 225 ns t f fall time i b1 = i b2 = 15 ma 30 ns * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter test conditions min max units npn general purpose amplifier (continued)
typical characteristics typical pulsed current gain vs collector current 0.1 0.3 1 3 10 30 100 300 0 100 200 300 400 500 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5v ce collector-emitter saturation voltage vs collector current 110100500 0.1 0.2 0.3 0.4 i - collector current (ma) v - collector-emitter voltage (v) ce s a t 25 c c = 10 125 c - 40 c base-emitter saturation voltage vs collector current 1 10 100 500 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltage (v) be s a t c = 10 25 c 125 c - 40 c base-emitter on voltage vs collector current 0.1 1 10 25 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be ( o n ) c v = 5v ce 25 c 12 5 c - 40 c collector-cutoff current vs ambient temperature 25 50 75 100 1 25 150 0.1 1 10 100 500 t - ambient temperature ( c) i - collector current (na) a v = 40v cb cbo emitter transition and output capacitance vs reverse bias voltage 0.1 1 10 100 4 8 12 16 20 reverse bias voltage (v) capacitance (pf) f = 1 mhz c ob c npn general purpose amplifier te ( con ti nu ed ) 2n440 1 / mm b t 440 1
typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 to-92 sot-23 turn on and turn off times vs collector current 10 100 1000 0 80 160 240 320 400 i - collector current (ma) time (ns) i = i = t on t off b1 c b2 i c 10 v = 25 v cc switching times vs collector current 10 100 1000 0 80 160 240 320 400 i - collector current (ma) time (ns) i = i = t r t s b1 c b2 i c 10 v = 25 v cc t f t d npn general purpose amplifier ( con ti nu ed ) 2n440 1 / mm b t 440 1
typical common emitter characteristics (f = 1.0khz) common emitter characteristics 0 102030405060 0 2 4 6 8 i - collector current (ma) char. relative to values at i = 10ma v = 10 v ce c c t = 25 c a o h oe h re h fe h ie common emitter characteristics 0 20406080100 0 0.4 0.8 1.2 1.6 2 2.4 t - ambient temperature ( c) char. relative to values at t = 25 c v = 10 v ce a a i = 10 ma c h oe h re h fe h ie o o common emitter characteristics 0 5 10 15 20 25 30 35 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 v - collector voltage (v) char. relative to values at v = 10v ce ce t = 2 5 c a o h oe h re h fe h ie i = 10 ma c npn general purpose amplifier ( con ti nu ed ) 2n440 1 / mm b t 440 1
test circuits 30 v 1.0 k ?? ?? ? 16 v 0 ? ? 200ns ? ? 200ns 500 ?? ?? ? 200 ?? ?? ? 50 ?? ?? ? 37 ?? ?? ? - 1.5 v 1.0 k ?? ?? ? 6.0 v 0 30 v figure 1: saturated turn-on switching time r note: b v = 5.0 v figure 2: saturated turn-off switching time e b o 1 k npn general purpose amplifier ( con ti nu ed ) 2n440 1 / mm b t 440 1
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging 2n4401 npn general purpose amplifier general description back to top contents ? general description ? product status/pricing/packaging ? order samples ? models ? application notes ? qualification support this device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 ma. datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** 2n4401bu full production $0.026 to - 92 3 bulk line 1: 2n line 2: 4401 line 3: -&3 2n4401nlbu full production $0.026 to - 92 3 bulk line 1: 2n line 2: 4401 line 3: -&3 2n4401ta full production $0.026 to - 92 3 ammo line 1: 2n line 2: 4401 line 3: -&3 2n4401tar full production $0.026 to - 92 3 ammo line 1: 2n line 2: 4401 line 3: -&3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 4 product folder - fairchild p/n 2n4401 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2n4401nlbu.mht
2n4401ta_nl full production n/a to - 92 3 ammo line 1: 2n line 2: 4401 line 3: -&3 2n4401tf full production $0.026 to - 92 3 tape reel line 1: 2n line 2: 4401 line 3: -&3 2n4401tfr full production $0.026 to - 92 3 tape reel line 1: 2n line 2: 4401 line 3: -&3 2n4401_d81z full production n/a to - 92 3 tape reel line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 4401 2n4401_j05z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 4401 2n4401_j18z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 4401 2n4401_j60z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 4401 2n4401_j61z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 4401 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product 2n4401 is available. click here for more information . pa g e 2 of 4 product folder - fairchild p/n 2n4401 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2n4401nlbu.mht
back to top models back to top application notes back to top qualification support click on a product for detailed qualification data back to top package & leads condition temperature range software version revision date pspice to-92-3 electrical 25c n/a n/a a n - 9006: igbt application note for camera strobe (145 k) jul 27, 2007 product 2n4401bu 2n4401nlbu 2n4401ta 2n4401tar 2n4401ta_nl 2n4401tf 2n4401tfr 2n4401_d81z 2n4401_j05z 2n4401_j18z 2n4401_j60z 2n4401_j61z ? 2007 fairchild semiconductor pa g e 3 of 4 product folder - fairchild p/n 2n4401 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2n4401nlbu.mht
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